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Weak localization scattering lengths in epitaxial, and CVD graphene
University of Oxford, England .
University of Oxford, England .
University of Oxford, England .
National Phys Lab, England .
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2012 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 86, no 23, 235441- p.Article in journal (Refereed) Published
Abstract [en]

Weak localization in graphene is studied as a function of carrier density in the range from 1 x 10(11) cm(-2) to 1.43 x 10(13) cm(-2) using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The magnetic field dependent weak localization is found to be well fitted by theory, which is then used to analyze the dependence of the scattering lengths L-phi, L-i, and L-* on carrier density. We find no significant carrier dependence for L-phi, a weak decrease for L-i with increasing carrier density just beyond a large standard error, and a n(-1/4) dependence for L-*. We demonstrate that currents as low as 0.01 nA are required in smaller devices to avoid hot-electron artifacts in measurements of the quantum corrections to conductivity. DOI: 10.1103/PhysRevB.86.235441

Place, publisher, year, edition, pages
American Physical Society , 2012. Vol. 86, no 23, 235441- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-88367DOI: 10.1103/PhysRevB.86.235441ISI: 000312832600015OAI: diva2:602876

Funding Agencies|UK EPSRC||Swedish Research Council||Foundation for Strategic Research||UK National Measurement Office||EU FP7 STREP ConceptGraphene||

Available from: 2013-02-04 Created: 2013-02-04 Last updated: 2013-03-22

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Yakimova, Rositsa
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