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600 V PiN diodes fabricated using on-axis 4H silicon carbide
University of Lyon, France .
University of Lyon, France .
University of Lyon, France .
University of Lyon, France .
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2012 (English)In: Materials Science Forum Vol 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 969-972 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have been performed in order to design their architecture. Some of these diodes have a breakdown voltage around 600 V. A comparison is made with similar diodes fabricated on off-cut grown layers. Computer simulations are used to explain lower breakdown voltages than those expected.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 969-972 p.
Keyword [en]
4H-SiC; bipolar diode; on-axis growth
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88454DOI: 10.4028/www.scientific.net/MSF.717-720.969ISI: 000309431000231OAI: oai:DiVA.org:liu-88454DiVA: diva2:604086
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-02-07 Created: 2013-02-07 Last updated: 2014-10-08

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ul Hassan, JawadHenry, AnneJanzén, Erik

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