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The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum Vol 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 161-164 p.Conference paper, Published paper (Refereed)
Abstract [en]

Carrier lifetime has been studied as a function of C/Si ratio and growth rate during epitaxial growth of n-type 4H-SiC using horizontal hot-wall CVD. Effort has been put on keeping all growth parameters constant with the exception of the parameter that is intended to vary. The carrier lifetime is found to decrease with increasing growth rate and the highest carrier lifetime is found for a C/Si ratio of 1. The surface roughness was correlated with epitaxial growth conditions with AFM analysis.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 161-164 p.
Keyword [en]
Epitaxial Growth; Carrier Lifetime; Atomic Force Microscopy; Photoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88452DOI: 10.4028/www.scientific.net/MSF.717-720.161ISI: 000309431000038OAI: oai:DiVA.org:liu-88452DiVA: diva2:604740
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-02-12 Created: 2013-02-07 Last updated: 2013-02-21

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Lilja, Louiseul-Hassan, JawadBooker, Ian D.Bergman, PederJanzén, Erik

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CiteExportLink to record
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