The Effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers
2012 (English)In: Materials Science Forum Vol 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 161-164 p.Conference paper (Refereed)
Carrier lifetime has been studied as a function of C/Si ratio and growth rate during epitaxial growth of n-type 4H-SiC using horizontal hot-wall CVD. Effort has been put on keeping all growth parameters constant with the exception of the parameter that is intended to vary. The carrier lifetime is found to decrease with increasing growth rate and the highest carrier lifetime is found for a C/Si ratio of 1. The surface roughness was correlated with epitaxial growth conditions with AFM analysis.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 161-164 p.
Epitaxial Growth; Carrier Lifetime; Atomic Force Microscopy; Photoluminescence
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88452DOI: 10.4028/www.scientific.net/MSF.717-720.161ISI: 000309431000038OAI: oai:DiVA.org:liu-88452DiVA: diva2:604740
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA