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Electrical and optical properties of high-purity epilayers grown by the low-temperature chloro-carbon growth method
Mississippi State University, USA .
Mississippi State University, USA .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2012 (English)In: Materials Science Forum Vol 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 129-132 p.Conference paper, Published paper (Refereed)
Abstract [en]

A reduced growth pressure (down to 10 Torr) was employed for the low-temperature chloro-carbon epitaxial growth. More than two times lower H-2 flow rate became possible. The optimal input H-2/Si and C/Si ratios were also lower. A significant reduction of the net free donor concentration resulted from the use of the low pressure, delivering partially compensated epilayers with the net free donor concentration below 7 x 10(13) cm(-3). Deep levels were characterized in the low-temperature epilayers for the first time. No Z(1/2) or EH6/7 centers could be detected by DLTS. No strong D-1 photoluminescence signature was observed. The high purity of the obtained epitaxial layers made it possible to use the low-temperature chloro-carbon epitaxial growth to fabricate drift regions of Schottky diodes for the first time. Promising values of the reverse breakdown voltage and the leakage current were obtained from the fabricated devices.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 129-132 p.
Keyword [en]
epitaxial growth; chloro-carbon; deep levels; photoluminescence; DLTS; Schottky
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-88451DOI: 10.4028/www.scientific.net/MSF.717-720.129ISI: 000309431000030OAI: oai:DiVA.org:liu-88451DiVA: diva2:604750
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2013-02-12 Created: 2013-02-07 Last updated: 2014-10-08

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Beyer, Franziska C.Henry, AnneKordina, OlleJanzén, Erik

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