Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-gated OFETs
2013 (English)In: Organic electronics, ISSN 1566-1199, Vol. 14, no 3, 790-796 p.Article in journal (Refereed) Published
We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1 V.
Place, publisher, year, edition, pages
Elsevier, 2013. Vol. 14, no 3, 790-796 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-88980DOI: 10.1016/j.orgel.2012.12.031ISI: 000316660200012OAI: oai:DiVA.org:liu-88980DiVA: diva2:606592