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Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
St Petersburg Academic University, Russia .
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6405-9509
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 2, 021910- p.Article in journal (Refereed) Published
Abstract [en]

Defect properties of quaternary GaNAsP/GaP epilayers grown by vapor phase epitaxy (VPE) are studied by photoluminescence and optically detected magnetic resonance techniques. Incorporation of more than 0.6% of nitrogen is found to facilitate formation of several paramagnetic defects which act as competing carrier recombination centers. One of the defects (labeled as Ga-i-D) is identified as a complex defect that has a Ga interstitial (Ga-i) atom residing inside a Ga tetrahedron as its core. A comparison of Ga-i-D with other Ga-i-related defects known in ternary GaNP and GaNAs alloys suggests that this defect configuration is specific to VPE-grown dilute nitrides.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 2, 021910- p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-89522DOI: 10.1063/1.4781459ISI: 000313670200029OAI: oai:DiVA.org:liu-89522DiVA: diva2:608235
Note

Funding Agencies|Swedish Research Council|621-2010-3815|Swedish Institute via Visby Programme||Linkoping Linnaeus Initiative for Novel Functional Materials (LiLI-NFM) by the Swedish Research Council|2008-6582|

Available from: 2013-02-26 Created: 2013-02-26 Last updated: 2017-12-06

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Dagnelund, DanielStehr, Jan E.Chen, WeiminBuyanova, Irina

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