Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 2, 021910- p.Article in journal (Refereed) Published
Defect properties of quaternary GaNAsP/GaP epilayers grown by vapor phase epitaxy (VPE) are studied by photoluminescence and optically detected magnetic resonance techniques. Incorporation of more than 0.6% of nitrogen is found to facilitate formation of several paramagnetic defects which act as competing carrier recombination centers. One of the defects (labeled as Ga-i-D) is identified as a complex defect that has a Ga interstitial (Ga-i) atom residing inside a Ga tetrahedron as its core. A comparison of Ga-i-D with other Ga-i-related defects known in ternary GaNP and GaNAs alloys suggests that this defect configuration is specific to VPE-grown dilute nitrides.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 2, 021910- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-89522DOI: 10.1063/1.4781459ISI: 000313670200029OAI: oai:DiVA.org:liu-89522DiVA: diva2:608235
Funding Agencies|Swedish Research Council|621-2010-3815|Swedish Institute via Visby Programme||Linkoping Linnaeus Initiative for Novel Functional Materials (LiLI-NFM) by the Swedish Research Council|2008-6582|2013-02-262013-02-262013-10-02