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Seeding layer influence on the low temperature photoluminescence intensity of 3C-SiC grown on 6H-SiC by sublimation epitaxy
CNRS, Montpellier, France.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Laboratoire des Multimateriaux et Interfaces, University Claude Bernard Lyon 1, Villeurbanne, France.
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2012 (English)In: HETEROSIC and WASMPE 2011 / [ed] Daniel Alquier, Trans Tech Publications Inc., 2012, Vol. 711, 149-153 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on n-type 3C-SiC samples grown by sublimation epitaxy. We focus on the low temperature photoluminescence intensity and show that the presence of a first conversion layer, grown at low temperature, is not only beneficial to improve the homogeneity of the polytype conversion but, also, to the LTPL signal intensity. From the use of a simple model, we show that this comes from a reduced density of non-radiative recombination centers.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 711, 149-153 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 711
Keyword [en]
3C-SiC; Al doping; sublimation epitaxy; Low temperature photoluminescence
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-89786DOI: 10.4028/www.scientific.net/MSF.711.149ISI: 000302673900027OAI: oai:DiVA.org:liu-89786DiVA: diva2:609611
Conference
4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, 27-30 June 2011, Tours, France
Available from: 2013-03-06 Created: 2013-03-06 Last updated: 2013-03-14

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Sun, JianwuVasiliauskas, RemigijusSyväjärvi, MikaelYakimova, Rositza

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