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Surface Potential Variations in Epitaxial Graphene Devices Investigated by Electrostatic Force Spectroscopy
National Physical Laboratory, Teddington, UK.
National Physical Laboratory, Teddington, UK.
National Physical Laboratory, Teddington, UK.
Chalmers University of Technology, Göteborg Sweden.
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2012 (English)In: Nanotechnology (IEEE-NANO), 2012, IEEE , 2012Conference paper (Refereed)
Abstract [en]

Electrostatic Force Spectroscopy and Scanning Kelvin Probe Microscopy techniques are used to study the performance of side-gated Hall devices made of epitaxial graphene on 4H-SiC(0001). Electrostatic Force Spectroscopy is a novel method which allows quantitative surface potential measurements with high spatial resolution. Using these techniques, we calibrate work function of the metal coated tip and define the work functions for single and double-layer graphene. We also show that the use of moderate strength electrical fields in the side-gate geometry does not notably change the performance of the device.

Place, publisher, year, edition, pages
IEEE , 2012.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-89785DOI: 10.1109/NANO.2012.6322049ISI: 000309933900164ISBN: 978-1-4673-2200-3OAI: diva2:609612
12th IEEE International Conference on Nanotechnology (IEEE-NANO), 20-23 August 2012, Birmingham, UK
Available from: 2013-03-06 Created: 2013-03-06 Last updated: 2013-03-14

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Yakimova, Rositza
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Semiconductor MaterialsThe Institute of Technology
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