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Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
2013 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 366, 61-66 p.Article in journal (Refereed) Published
Abstract [en]

We have studied growth and self-separation of bulk GaN on c-oriented Al2O3 using low temperature (LT) GaN buffer layers. By studying the X-ray diffraction (XRD) signature for the asymmetric and symmetric reflections versus the LT-GaN thickness and V/III precursor ratio, we observe that the peak width of the reflections is minimized using a LT buffer thickness of ∼100–300 nm. It was observed that the V/III precursor ratio has a strong influence on the morphology. In order to obtain a smooth morphology, the V/III precursor ratio has to be more than 17 during the growth of the buffer layer. By using an optimized LT buffer layer for growth of a 20 μm thick GaN layer, we obtain a XRD peak with a full width at half maximum of ∼400 and ∼250 arcs for (002) and (105) reflection planes, respectively, and with a dark pit density of ∼2.2×108 cm−2. For layers thicker than 1 mm, the GaN was spontaneously separated and by utilizing this process, thick free freestanding 2″ GaN substrates were manufactured.

Place, publisher, year, edition, pages
Elsevier, 2013. Vol. 366, 61-66 p.
Keyword [en]
Crystal morphology, Interfaces, Roughening, Growth from vapor, Hydride vapor phase epitaxy, Nitrides
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-90144DOI: 10.1016/j.jcrysgro.2012.12.016ISI: 000314824800013OAI: diva2:612149

Funding Agencies|Swedish Research Science Council||Swedish Energy Agency||

Available from: 2013-03-20 Created: 2013-03-20 Last updated: 2015-09-22

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Hemmingsson, CarlPozina, Galia
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