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Effective mass of electron in monolayer graphene: Electron-phonon interaction
Department of Physics, Faculty of Science, Anadolu University, Turkey.
Department of Physics, Faculty of Science, Anadolu University, Turkey.
Department of Physics, Faculty of Science, Anadolu University, Turkey.
Nanotechnology Research Center, Departments of Physics and Electrical and Electronics Engineering, Bilkent University, Turkey.
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2013 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 113, no 4Article in journal (Refereed) Published
Abstract [en]

Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m−1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 113, no 4
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-90210DOI: 10.1063/1.4789385ISI: 000314724500045OAI: oai:DiVA.org:liu-90210DiVA: diva2:612343
Available from: 2013-03-28 Created: 2013-03-21 Last updated: 2017-12-06Bibliographically approved

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ul Hassan, JawadJanzén, Erik

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