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Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures
Kiev, Ukraine.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Kiev, Ukraine.
Chernivtsi, Ukraine.
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2013 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 81, 72-77 p.Article in journal (Refereed) Published
Abstract [en]

We report the low-temperature (250 °C) fabrication of n-ZnCdO/p-SiC heterostructures by direct current magnetron sputtering (DC MS) technique. As-grown heterostructures exhibit diode characteristics: current–voltage measurements showed a typical rectifying characteristic of a p–n junction and the presence of series resistance. It is found that the turn-on voltage of heterostructures depends on the acceptor concentration in p-SiC. Via Cd doping of ZnO the energy barrier for holes can be lowered, which promotes the hole injection from the p-type layer to the n-type layer as well as favors the radiative recombination in the n-ZnCdO layer.

Place, publisher, year, edition, pages
2013. Vol. 81, 72-77 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-90901DOI: 10.1016/j.sse.2013.01.015ISI: 000317444400014OAI: oai:DiVA.org:liu-90901DiVA: diva2:614980
Available from: 2013-04-08 Created: 2013-04-08 Last updated: 2017-12-06Bibliographically approved

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Khranovskyy, VolodymyrSyväjärvi, MikaelJokubavicius, ValdasYakimova, Rositsa

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