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Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C
Manchester Metropolitan University, UK.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
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2013 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 93, 56-59 p.Article in journal (Refereed) Published
Abstract [en]

Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed.

Place, publisher, year, edition, pages
Elsevier , 2013. Vol. 93, 56-59 p.
Keyword [en]
MAX phase, Titanium silicon carbide, Nano-laminate, Physical vapour deposition, Raman microscopy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91005DOI: 10.1016/j.vacuum.2013.01.003ISI: 000316092900010OAI: oai:DiVA.org:liu-91005DiVA: diva2:615673
Note

Funding Agencies|EPSRC|EP/G033471/1EP/F056117/1|ERC|227754|

Available from: 2013-04-12 Created: 2013-04-11 Last updated: 2017-12-06Bibliographically approved

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Lu, JunEklund, PerHultman, Lars

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