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Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
Kyoto University, Japan .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 11Article in journal (Refereed) Published
Abstract [en]

The Z(1/2) center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z(1/2) center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z(1/2) defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V-C) determined by electron paramagnetic resonance, suggesting that the Z(1/2) deep level originates from V-C.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 11
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91342DOI: 10.1063/1.4796141ISI: 000316544900043OAI: oai:DiVA.org:liu-91342DiVA: diva2:617253
Note

Funding Agencies|Japan Society for the Promotion of Science|2122600880225078|Swedish Energy Agency||Swedish Research Council VR/Linne LiLI-NFM||Knut and Alice Wallenberg Foundation||

Available from: 2013-04-22 Created: 2013-04-22 Last updated: 2017-12-06

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Thang Trinh, XuanSon Tien, NguyenJanzén, Erik

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