Investigation on origin of Z(1/2) center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 11Article in journal (Refereed) Published
The Z(1/2) center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z(1/2) center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z(1/2) defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (V-C) determined by electron paramagnetic resonance, suggesting that the Z(1/2) deep level originates from V-C.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 11
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91342DOI: 10.1063/1.4796141ISI: 000316544900043OAI: oai:DiVA.org:liu-91342DiVA: diva2:617253
Funding Agencies|Japan Society for the Promotion of Science|2122600880225078|Swedish Energy Agency||Swedish Research Council VR/Linne LiLI-NFM||Knut and Alice Wallenberg Foundation||2013-04-222013-04-222013-04-22