Optimization of SiC MESFET for High Power and High Frequency Applications
2011 (English)In: Materials Science Forum (Volumes 679 - 680), Trans Tech Publications Inc., 2011, 629-632 p.Conference paper (Refereed)
SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×1017 cm-3 in the channel and the second type has higher doping (5×1017 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 629-632 p.
DC Measurements, High Doped Channel, High Frequency, High Power, MESFET, Silicon Carbide (SiC), Small-Signal Measurements
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91396DOI: 10.4028/www.scientific.net/MSF.679-680.629OAI: oai:DiVA.org:liu-91396DiVA: diva2:617599
ECSCRM 2010, Oslo, Norway