Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
2011 (English)In: Materials Science Forum (Volumes 679 - 680), Trans Tech Publications Inc., 2011, 205-208 p.Conference paper (Refereed)
Free carrier dynamics has been studied in 4H- and 3C-SiC in a wide temperature range using time-resolved photoluminescence, free carrier absorption, and light induced transient grating techniques. Considerably high carrier lifetime was observed in 3C-SiC epitaxial layers grown on 4H-SiC substrates using hot-wall CVD with respect to previously reported values for 3C-SiC grown either on Si or on 6H-SiC substrates. The temperature dependences of carrier lifetime and diffusion coefficient for 4H- and 3C-SiC were compared. Shorter photoluminescence decay time with respect to free carrier absorption decay time was observed in the same 4H-SiC sample, while these techniques revealed similar trends in the carrier lifetime temperature dependencies. However, the latter dependences for hot-wall CVD-grown 3C layers were found different if measured by time resolved photoluminescence and free carrier absorption techniques.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 205-208 p.
Carrier Lifetime, Diffusion Coefficient, Free Carrier Absorption Decay, Light Induced Diffraction Grating
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91397DOI: 10.4028/www.scientific.net/MSF.679-680.205OAI: oai:DiVA.org:liu-91397DiVA: diva2:617600
ECSCRM 2010, Oslo, Norway