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Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
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2008 (English)In: IET Seminar Digest, Volume 2008, Issue 2, 2008, 2008, 87-91 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon Carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3kV. Diodes have been packaged and measured up to 300°C. The Schottky diode shows an increase of voltage drop with temperature and a reverse recovery charge independent from temperature. The PiN diode reverse recovery charge is ×20 at 300°C compared to that of the Schottky diode. 55% of the stressed bipolar diodes at 20A show a very small forward voltage drift. Theswitching losses of these stressed diodes are reduced by 20%. Substrate quality enhancement makes large SiC component fabrication possible (25mm 2 Schottky diodes) and bipolar components show very small tension drift with temperature.

Place, publisher, year, edition, pages
2008. 87-91 p.
Keyword [en]
Bipolar diodes; Breakdown voltage; Forward voltage; PiN diode; Reverse recovery charge; Schottky; Schottky diodes; Substrate quality; Voltage drop
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91398DOI: 10.1049/ic:20080219ISBN: 978-80-01-04139-0 (print)OAI: oai:DiVA.org:liu-91398DiVA: diva2:617602
Conference
9th International Seminar on Power Semiconductors, ISPS 2008; Prague; Czech Republic; 27 August 2008 through 29 August 2008;
Available from: 2013-04-23 Created: 2013-04-23 Last updated: 2014-06-17

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Hassan, JawadBergman, Peder

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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  • de-DE
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  • en-US
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  • nn-NB
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Output format
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