Comparison between 3.3kV 4H-SiC schottky and bipolar diodes
2008 (English)In: IET Seminar Digest, Volume 2008, Issue 2, 2008, 2008, 87-91 p.Conference paper (Refereed)
Silicon Carbide Schottky and bipolar diodes have been fabricated with a breakdown voltage of 3.3kV. Diodes have been packaged and measured up to 300°C. The Schottky diode shows an increase of voltage drop with temperature and a reverse recovery charge independent from temperature. The PiN diode reverse recovery charge is ×20 at 300°C compared to that of the Schottky diode. 55% of the stressed bipolar diodes at 20A show a very small forward voltage drift. Theswitching losses of these stressed diodes are reduced by 20%. Substrate quality enhancement makes large SiC component fabrication possible (25mm 2 Schottky diodes) and bipolar components show very small tension drift with temperature.
Place, publisher, year, edition, pages
2008. 87-91 p.
Bipolar diodes; Breakdown voltage; Forward voltage; PiN diode; Reverse recovery charge; Schottky; Schottky diodes; Substrate quality; Voltage drop
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91398DOI: 10.1049/ic:20080219ISBN: 978-80-01-04139-0OAI: oai:DiVA.org:liu-91398DiVA: diva2:617602
9th International Seminar on Power Semiconductors, ISPS 2008; Prague; Czech Republic; 27 August 2008 through 29 August 2008;