High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
2007 (English)In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2007, 285-288 p.Conference paper (Refereed)
4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N + substrate using a JTE as edge termination. A breakdown voltage higherthan 3.5 kV has been measured on 0.16 and 2.56 mm 2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm 2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300°C.
Place, publisher, year, edition, pages
2007. 285-288 p.
High temperature effects; Leakage currents; Substrates; Switching theory; Thermoelectricity; Voltage control
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91399DOI: 10.1109/ISPSD.2007.4294988OAI: oai:DiVA.org:liu-91399DiVA: diva2:617603