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High temperature behaviour of 3.5 kV 4H-SiC JBS diodes
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
Centro Nacional de Microelectrónica, CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain .
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2007 (English)In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2007, 285-288 p.Conference paper, Published paper (Refereed)
Abstract [en]

4H-SiC JBS diodes have been manufactured on a Norstel epitaxied N/N + substrate using a JTE as edge termination. A breakdown voltage higherthan 3.5 kV has been measured on 0.16 and 2.56 mm 2 diodes. The leakage current in the 25°C-300°C temperature range depends on the bipolar/Schottky ratio whereas in forward mode its impact is minor. Diodes have been stressed in DC mode to show that the 2.56 mm 2 diodes have a slight forward voltage degradation independently of the layout. In switching mode, the recovery charge is only 20 nC for a 4A current switched at 300°C.

Place, publisher, year, edition, pages
2007. 285-288 p.
Keyword [en]
High temperature effects; Leakage currents; Substrates; Switching theory; Thermoelectricity; Voltage control
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91399DOI: 10.1109/ISPSD.2007.4294988OAI: oai:DiVA.org:liu-91399DiVA: diva2:617603
Available from: 2013-04-23 Created: 2013-04-23 Last updated: 2013-04-23

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Bergman, Peder

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • Other style
More styles
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  • de-DE
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  • en-US
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  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
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  • asciidoc
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