A DC Comparison Study Between H-Intercalated and Native epigrapheneson SiC substrates
2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 129-132 p.Conference paper (Refereed)
The aim of this study is to compare DC characteristics of ‘as-grown’ and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during thegraphitization process . The fabrication processing steps used to define test structures areidentical for the two materials. Results on the DC behavior and uniformity issues with respect toboth materials are reported. The as-grown material behaves as a linear resistance, while Hintercalateddemonstrates a non-linear characteristic. Hysteresis effects and time dependentbehaviors are also observed in both materials. Extensive Hall measurements are performed on bothmaterials with the aim of providing a qualitative understanding of material uniformity in both epigraphenes.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 129-132 p.
Epi-graphene of SiC, uniformity, DC analysis, comparison study, H-Intercalation, graphene fabrication, memory effects
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91403DOI: 10.4028/www.scientific.net/MSF.740-742.129OAI: oai:DiVA.org:liu-91403DiVA: diva2:617661
ECSCRM 2012, St Petersburg, Russia