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A DC Comparison Study Between H-Intercalated and Native epigrapheneson SiC substrates
Department of Microtechnology and Nanoscience (Chalmers) Göteborg, Sweden.
Department of Microtechnology and Nanoscience (Chalmers) Göteborg, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Department of Microtechnology and Nanoscience (Chalmers) Göteborg, Sweden.
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2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 129-132 p.Conference paper (Refereed)
Abstract [en]

The aim of this study is to compare DC characteristics of ‘as-grown’ and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during thegraphitization process [5]. The fabrication processing steps used to define test structures areidentical for the two materials. Results on the DC behavior and uniformity issues with respect toboth materials are reported. The as-grown material behaves as a linear resistance, while Hintercalateddemonstrates a non-linear characteristic. Hysteresis effects and time dependentbehaviors are also observed in both materials. Extensive Hall measurements are performed on bothmaterials with the aim of providing a qualitative understanding of material uniformity in both epigraphenes.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 129-132 p.
Keyword [en]
Epi-graphene of SiC, uniformity, DC analysis, comparison study, H-Intercalation, graphene fabrication, memory effects
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-91403DOI: 10.4028/ diva2:617661
ECSCRM 2012, St Petersburg, Russia
Available from: 2013-04-24 Created: 2013-04-24 Last updated: 2013-04-24

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ul Hassan, JawadJanzén, Erik
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