liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 225-228 p.Conference paper, Published paper (Refereed)
Abstract [en]

Results of surface preparation on Si-face 4° off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 °C, 1600 °C, 1620 °C and 1640 °C, were studied. In-situ etching with only H2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 °C could degrade the substrates surface quality.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 225-228 p.
Keyword [en]
4H-SiC Substrates, CVD, Surface Preparation
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91405DOI: 10.4028/www.scientific.net/MSF.740-742.225ISI: 000319785500054OAI: oai:DiVA.org:liu-91405DiVA: diva2:617663
Conference
ECSCRM 2012, St Petersburg, Russia
Available from: 2013-04-24 Created: 2013-04-24 Last updated: 2014-10-08

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Li, Xunul Hassan, JawadKordina, OlofJanzén, ErikHenry, Anne

Search in DiVA

By author/editor
Li, Xunul Hassan, JawadKordina, OlofJanzén, ErikHenry, Anne
By organisation
Semiconductor MaterialsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 112 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf