Surface preparation of 4 degrees off-axis 4H-SIC substrate for epitaxial growth
2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 225-228 p.Conference paper (Refereed)
Results of surface preparation on Si-face 4° off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HCl) and only hydrogen (H2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 °C, 1600 °C, 1620 °C and 1640 °C, were studied. In-situ etching with only H2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HCl at temperature higher than 1620 °C could degrade the substrates surface quality.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 225-228 p.
4H-SiC Substrates, CVD, Surface Preparation
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91405DOI: 10.4028/www.scientific.net/MSF.740-742.225ISI: 000319785500054OAI: oai:DiVA.org:liu-91405DiVA: diva2:617663
ECSCRM 2012, St Petersburg, Russia