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On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Lab of Materials and Semiconductor Physics, Royal Institute of Technology P.O. Box Electrum 229, SE-16440 Kista, Sweden.
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2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 173-176 p.Conference paper, Published paper (Refereed)
Abstract [en]

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 µm and controlled n-type doping of 4 x 1014 cm-3. The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 µs using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 173-176 p.
Keyword [en]
Carrier Lifetime, Chemical Vapor Deposition (CVD), Growth Mechanism, High Power Devices, On-Axis
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91406DOI: 10.4028/www.scientific.net/MSF.740-742.173ISI: 000319785500041OAI: oai:DiVA.org:liu-91406DiVA: diva2:617666
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Available from: 2013-04-24 Created: 2013-04-24 Last updated: 2013-08-23

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ul Hassan, JawadBooker, IanLilja, LouiseBergman, PederJanzén, Erik

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ul Hassan, JawadBooker, IanLilja, LouiseBergman, PederJanzén, Erik
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  • apa
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