On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 173-176 p.Conference paper (Refereed)
We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 µm and controlled n-type doping of 4 x 1014 cm-3. The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 µs using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 173-176 p.
Carrier Lifetime, Chemical Vapor Deposition (CVD), Growth Mechanism, High Power Devices, On-Axis
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91406DOI: 10.4028/www.scientific.net/MSF.740-742.173ISI: 000319785500041OAI: oai:DiVA.org:liu-91406DiVA: diva2:617666
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)