Surface evolution of 4H-SiC(0001) during in-situ surface preparationand its influence on graphene properties
2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 157-160 p.Conference paper (Refereed)
The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 157-160 p.
Atomic Force Microscopy, Carrier Mobility, Graphen, Hydrogen Intercalation, Low Energy Electron Microscopy, Surface Morphology
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91407DOI: 10.4028/www.scientific.net/MSF.740-742.157ISI: 000319785500038OAI: oai:DiVA.org:liu-91407DiVA: diva2:617668
ICSCRM 2012, St Petersburg, Russia