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Surface evolution of 4H-SiC(0001) during in-situ surface preparationand its influence on graphene properties
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany.
Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
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2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 157-160 p.Conference paper, Published paper (Refereed)
Abstract [en]

The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 157-160 p.
Keyword [en]
Atomic Force Microscopy, Carrier Mobility, Graphen, Hydrogen Intercalation, Low Energy Electron Microscopy, Surface Morphology
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91407DOI: 10.4028/www.scientific.net/MSF.740-742.157ISI: 000319785500038OAI: oai:DiVA.org:liu-91407DiVA: diva2:617668
Conference
ICSCRM 2012, St Petersburg, Russia
Available from: 2013-04-24 Created: 2013-04-24 Last updated: 2013-08-23

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ul Hassan, JawadJanzén, Erik

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