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New generation SiC based field effect transistor gas sensors
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, The Institute of Technology.
National Physical Laboratory, Teddington, Middlesex, UK.
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
2013 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 179, no SI, 95-106 p.Article in journal (Refereed) Published
Abstract [en]

With the advances in SiC processing and high temperature packaging technology over the past few years as well as the accumulation of knowledge regarding the sensing characteristics of different gate metal/insulator material combinations for different gaseous substances SiC based field effect high temperature sensors are moving towards commercial maturity. The route towards commercialization has, however, also led to the necessity of making new considerations regarding the basic transducer design and operation. The focus of this paper is thus the investigation of some basic transducer related parameters influence on sensor device performance, e.g. sensitivity and long-term stability, and characteristics to exemplify the importance of taking design, processing and operation parameters into account when developing field effect sensor devices for commercial applications. less thanbrgreater than less thanbrgreater thanTwo different types of devices, enhancement and depletion type MISFET sensors, with different gate dimensions and two different gate metallisations, Pt and Ir, have been processed. I/V-characteristics have been obtained under exposure to various concentrations of H-2, NH3, CO and O-2 and different bias conditions and the influence of gate dimensions and bias conditions on the sensitivity and dynamic range investigated. The long-term stability has also been studied and compared between different devices and bias conditions for conceptually different gas compositions. The results show that the type of basic transducer device, its design and mode of operation has a large influence on sensor performance. Depletion type devices offer better possibilities for tuning of sensitivity and dynamic range as well as improved longterm stability properties, whereas enhancement type devices require much less control of the processing to ensure good repeatability and yield. Some results have also been verified for two possible applications of SiC based field effect sensors, ammonia slip monitoring for the control of SCR/SNCR and combustion control in domestic/district heating facilities.

Place, publisher, year, edition, pages
Elsevier , 2013. Vol. 179, no SI, 95-106 p.
Keyword [en]
SiC, Enhancement type, Depletion type, MISFET, High temperature gas sensor, Combustion control
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-91539DOI: 10.1016/j.snb.2012.12.059ISI: 000316588100012OAI: diva2:618311

Funding Agencies|VINNOVA VINN Excellence Centre FunMat - Functional Nanoscale Materials||

Available from: 2013-04-26 Created: 2013-04-26 Last updated: 2014-01-09

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