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Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU .
Departamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU .
Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU.
Instituto Tecnol´ogico e Nuclear/IST, Sacavem, Portugal, EU; Centro de F´ısica Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU .
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2012 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 97, no 6, 68004- p.Article in journal (Refereed) Published
Abstract [en]

The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the 5D0 7F2transition in the Eu3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics.

Place, publisher, year, edition, pages
2012. Vol. 97, no 6, 68004- p.
Keyword [en]
III-V semiconductors, Doping and impurity implantation, Cathodoluminescence, ionoluminescence
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91706DOI: 10.1209/0295-5075/97/68004OAI: oai:DiVA.org:liu-91706DiVA: diva2:618732
Available from: 2013-04-30 Created: 2013-04-30 Last updated: 2017-10-17

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Darakchieva, Vanya

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