Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
2012 (English)In: MRS Proceedings Volume 1396, 2012, o07-27 p.Conference paper (Refereed)
We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1x1018 cm-3 and 3x1019 cm-3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.
Place, publisher, year, edition, pages
2012. o07-27 p.
nitride; electron-phonon interactions; optical properties
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91708DOI: 10.1557/opl.2012.86OAI: oai:DiVA.org:liu-91708DiVA: diva2:618746
2011 MRS Fall Meeting.