liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A..
Department of Electrical Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, U.S.A..
Instituto Tecnológico e Nuclear, Sacavém, Portugal.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2012 (English)In: MRS Proceedings Volume 1396, 2012, o07-27 p.Conference paper, Published paper (Refereed)
Abstract [en]

We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1x1018 cm-3 and 3x1019 cm-3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.

Place, publisher, year, edition, pages
2012. o07-27 p.
Keyword [en]
nitride; electron-phonon interactions; optical properties
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91708DOI: 10.1557/opl.2012.86OAI: oai:DiVA.org:liu-91708DiVA: diva2:618746
Conference
2011 MRS Fall Meeting.
Available from: 2013-04-30 Created: 2013-04-30 Last updated: 2013-04-30

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Darakchieva, Vanja

Search in DiVA

By author/editor
Darakchieva, Vanja
By organisation
Semiconductor MaterialsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 47 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf