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Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC
Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A..
Department of Electrical Engineering, University of Nebraska–Lincoln, Lincoln, Nebraska, U.S.A..
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: MRS Proceedings Volume 1407, 2012, aa20-43 p.Conference paper, Published paper (Refereed)
Abstract [en]

Spectroscopic mapping ellipsometry measurements in the visible spectrum (1.25 to 5.35 eV) are performed to determine the lateral variations of epitaxial graphene properties as grown on 3C SiC. Data taken in the visible spectrum is sensitive to both the Drude absorption of free charge carriers and the characteristic exciton enhanced van Hove singularity at 5 eV. Subsequent analysis with simple oscillator models allows the determination of physical parameters such as free charge carrier scattering time and local graphene thickness with a lateral resolution of 50 microns.

Place, publisher, year, edition, pages
2012. aa20-43 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91709DOI: 10.1557/opl.2012.457OAI: oai:DiVA.org:liu-91709DiVA: diva2:618750
Conference
2011 MRS Fall Meeting.
Available from: 2013-04-30 Created: 2013-04-30 Last updated: 2013-04-30

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Darakchieva, VanyaYakimova, Rositza

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