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Al1xInxN/GaN bilayers: Structure,morphology, and optical properties
Instituto Tecnolo´ gico e Nuclear, Estrada Nacional 10, 2696-953 Sacave´m, Portugal and Centro de Fı´ sica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal.
Instituto Tecnolo´ gico e Nuclear, Estrada Nacional 10, 2696-953 Sacave´m, Portugal and CICECO, Departamento de Fı´ sica and I3N, Universidade de Aveiro, 3810-193 Aveiro, Portuga.
Instituto Tecnolo´ gico e Nuclear, Estrada Nacional 10, 2696-953 Sacave´m, Portugal and Centro de Fı´ sica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal.
Instituto Tecnolo´ gico e Nuclear, Estrada Nacional 10, 2696-953 Sacave´m, Portugal and Centro de Fı´ sica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal.
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2010 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 247, no 7, 1740-1746 p.Article in journal (Refereed) Published
Abstract [en]

High quality Al1xInxN/GaN bilayers, grown by metal organic chemical vapor deposition (MOCVD), were characterized using structural and optical techniques. Compositional analysis was performed using Rutherford backscattering spectrometry(RBS) and elastic recoil detection analysis (ERDA). The InN molar fraction x decreased approximately linearly with increasing growth temperature and ranged from x¼0.13 to0.24. Up tox¼0.20 the layers grow pseudomorphically to GaN with good crystalline quality. These layers show a smoothsurface with V-shaped pits. Two layers with InN contents around 24% showed partial strain relaxation. However, themechanisms leading to relaxation of compressive strain arevery different in the two samples grown both at similartemperature but with different growth rates. One sample shows a decreased c/a ratio, as expected for relaxation of the compressive strain, while In was shown to be homogeneouslydistributed with depth. The other sample started to grow withx¼0.24 but relaxed mainly by reduction of the incorporated InN content towards the lattice-match composition of x0.17. Both samples have an increased surface roughness. All samples show strong Al1xInxN band edge luminescence with large bowing parameter and Stokes’ shifts.

Place, publisher, year, edition, pages
2010. Vol. 247, no 7, 1740-1746 p.
Keyword [en]
photoluminescence, Rutherford backscattering spectrometry, surface structure, III–V semiconductors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91711DOI: 10.1002/pssb.200983656OAI: oai:DiVA.org:liu-91711DiVA: diva2:618754
Available from: 2013-04-30 Created: 2013-04-30 Last updated: 2017-12-06

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Darakchieva, Vanya

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