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Europium doping of zincblende GaN by ion implantation
Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal .
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom .
Instituto Tecnológico e Nuclear, EN10, 2686-953 Sacavem, Portugal and CFNUL, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugal .
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom .
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2009 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 105, no 11, 113507- p.Article in journal (Refereed) Published
Abstract [en]

Eu was implanted into high quality cubic (zincblende) GaN (ZB-GaN) layers grown by molecular beam epitaxy. Detailed structural characterization before and after implantation was performed by x-ray diffraction (XRD) and Rutherford backscattering/channeling spectrometry. A low concentration (<10%) of wurtzite phase inclusions was observed by XRD analysis in as-grown samples with their (0001) planes aligned with the {111} planes of the cubic lattice. Implantation of Eu causes an expansion of the lattice parameter in the implanted region similar to that observed for the c-lattice parameter of wurtzite GaN (W-GaN). For ZB-GaN:Eu, a large fraction of Eu ions is found on a high symmetry interstitial site aligned with the 〈110〉 direction, while a Ga substitutional site is observed for W-GaN:Eu. The implantation damage in ZB-GaN:Eu could partly be removed by thermal annealing, but an increase in the wurtzite phase fraction was observed at the same time. Cathodoluminescence, photoluminescence (PL), and PL excitation spectroscopy revealed several emission lines which can be attributed to distinct Eu-related optical centers in ZB-GaN and W-GaN inclusions.

Place, publisher, year, edition, pages
2009. Vol. 105, no 11, 113507- p.
Keyword [en]
annealing, cathodoluminescence, europium, gallium compounds, III-V semiconductors, ion implantation, lattice constants, molecular beam epitaxial growth, photoluminescence, Rutherford backscattering, semiconductor doping, semiconductor thin films, wide band gap semiconductors, X-ray diffraction
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91712DOI: 10.1063/1.3138806OAI: oai:DiVA.org:liu-91712DiVA: diva2:618760
Available from: 2013-04-30 Created: 2013-04-30 Last updated: 2017-12-06

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