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Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 385-388 p.Conference paper, Published paper (Refereed)
Abstract [en]

Defects in unintentionally Nb-doped 6H-SiC grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). An EPR spectrum with a hyperfine (hf) structure consisting of ten equal-intensity lines was observed. The hf structure is identified to be due to the hf interaction between an electron spin S=1/2 and a nuclear spin of 93Nb. The hf interaction due to the interaction three nearest Si neighbors was also observed, suggesting the involvement of the C vacancy (VC) in the defect. Only one EPR spectrum was observed in 6H-SiC polytype. The obtained spin-Hamiltonian parameters are similar to that of the Nb-related EPR defect in 4H-SiC, suggesting that the EPR center in 6H-SiC is the NbSiVC complex in the neutral charge state, NbSiVC0. Photoexcitation EPR experiments suggest that the single negative charge state of the NbSiVC complex is located at ~1.3 eV below the conduction band minimum.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 385-388 p.
Keyword [en]
Electron Paramagnetic Resonance (EPR), Nb, Split-Vacancy Complex
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-91730DOI: 10.4028/www.scientific.net/MSF.740-742.385ISI: 000319785500090OAI: oai:DiVA.org:liu-91730DiVA: diva2:618961
Conference
ECSCRM 2012, St Petersburg, Russia
Available from: 2013-04-30 Created: 2013-04-30 Last updated: 2013-08-23

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Trinh, Xuan ThangGällström, AndreasNguyen, Son TianKordina, OlleJanzén, Erik

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