Electron Paramagnetic Resonance Studies of Nb in 6H-SiC
2013 (English)In: Materials Science Forum (Volumes 740 - 742), Trans Tech Publications Inc., 2013, 385-388 p.Conference paper (Refereed)
Defects in unintentionally Nb-doped 6H-SiC grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). An EPR spectrum with a hyperfine (hf) structure consisting of ten equal-intensity lines was observed. The hf structure is identified to be due to the hf interaction between an electron spin S=1/2 and a nuclear spin of 93Nb. The hf interaction due to the interaction three nearest Si neighbors was also observed, suggesting the involvement of the C vacancy (VC) in the defect. Only one EPR spectrum was observed in 6H-SiC polytype. The obtained spin-Hamiltonian parameters are similar to that of the Nb-related EPR defect in 4H-SiC, suggesting that the EPR center in 6H-SiC is the NbSiVC complex in the neutral charge state, NbSiVC0. Photoexcitation EPR experiments suggest that the single negative charge state of the NbSiVC complex is located at ~1.3 eV below the conduction band minimum.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 385-388 p.
Electron Paramagnetic Resonance (EPR), Nb, Split-Vacancy Complex
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91730DOI: 10.4028/www.scientific.net/MSF.740-742.385ISI: 000319785500090OAI: oai:DiVA.org:liu-91730DiVA: diva2:618961
ECSCRM 2012, St Petersburg, Russia