The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 13, 132113- p.Article in journal (Refereed) Published
Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.
Place, publisher, year, edition, pages
2013. Vol. 102, no 13, 132113- p.
aluminium compounds, electrical conductivity, gallium compounds, III-V semiconductors, impurity states, oxygen, paramagnetic resonance, silicon, wide band gap semiconductors
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-91731DOI: 10.1063/1.4800978ISI: 000317240200047OAI: oai:DiVA.org:liu-91731DiVA: diva2:618965