PEEM, LEED and PES temperature study of Eu doped Gd2O3 nanoparticles and their interactions with silicon
2013 (English)Manuscript (preprint) (Other academic)
We report the formation of silicate and silicide by annealing of a SiOx surface, with low coverage of Eu doped Gd2O3 nanoparticles. Interestingly, the annealing temperature required for removal of native oxide from the Si substrate decreases with as much as 200 degrees in presence of the nanoparticles. XPEEM, LEEM and MEM are used to monitor the silicide/silicate formation and SiOx removal. Fragmentation of the nanoparticles is observed, and the SiOx layer is gradually removed. Eu is migrating to clean Si areas during the annealing process, while Gd is found in areas where oxide is still present. This annealing process is clearly facilitated in the presence of rare-earth based nanoparticles, where nanoparticles are suggested to function as reaction sites. Reduction of the annealing temperature of SiOx substrates is also observed in presence of pure Eu3+ and Gd3+ ions, but to lesser extent. The significant reduction of the annealing temperature of SiO by several hundred degrees, in presence of Eu doped Gd2O3 nanoparticles, is remarkable. This type of material may find applications both within optoelectronics and processing microelectronic industry.
Place, publisher, year, edition, pages
PEEM, LEED, PES, rare-earth, silicon, annealing
IdentifiersURN: urn:nbn:se:liu:diva-91848OAI: oai:DiVA.org:liu-91848DiVA: diva2:619327