Influence of a Changing Gate Bias on the Sensing Properties of SiC Field Effect Gas Sensors
2012 (English)In: IMCS 2012, 2012, 140-143 p.Conference paper (Other academic)
Field effect transistors based on silicon carbide have previously been used with temperature cycled operation to enhance the selectivity. In this study the influence of a changing gate bias on the sensing properties of a platinum gate FET has been studied in order to extend the virtual multi-sensor approach. The sensor exhibits gas specific hysteresis when changing the gate bias indicating that additional information regarding selectivity is contained in the transient behavior. Measurements also showed that especially the shape of the sensor signal changes dramatically with different gas exposures (e.g. H2, CO or NH3) during relaxation after step changes of the gate bias. The changing shape primarily reflects the gas itself and not the concentration so that the selectivity of the sensor is increased.
Place, publisher, year, edition, pages
2012. 140-143 p.
Changing gate bias, MISiC FET, gas specific hysteresis, transient behavior
Other Chemical Engineering
IdentifiersURN: urn:nbn:se:liu:diva-92402DOI: 10.5162/IMCS2012/1.5.4ISBN: 978-3-9813484-2-2OAI: oai:DiVA.org:liu-92402DiVA: diva2:620739
14th International Meeting on Chemical Sensors (IMCS 2012), 20-23 May 2012, Nürnberg, Germany