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Gas sensing properites of pulsed laser deposited vanadium oxide thin films
University of Oulu, Finland. (Microelectronics and Material Physics Laboratories)
Linköping University, Department of Physics, Chemistry and Biology, Applied Sensor Science. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2817-3574
University of Oulu, Finland. (Microelectronics and Material Physics Laboratories)
2012 (English)In: IMCS 2012, 2012, 279-282 p.Conference paper (Other academic)
Abstract [en]

Vanadium oxide thin films were fabricated by pulsed laser deposition (PLD). The crystal structure and symmetry of the deposited films was studied with X-ray diffraction (XRD) and Raman spectroscopy, respectively. The surface morphology was studied with atomic force microscope (AFM). The thin films consisted mostly of V2O5 phase of vanadium oxides, but also of another phase, which is generally found in form of nanotubes. The measured optical transmission spectra of the films also supported the existence of different phases. The electrical resistivity of the films as a function of temperature behaved like in a typical semiconductor. The gas sensing properties of the films were characterized for different NO concentrations. The results showed a response to NO, which varied from oxidative to reducing according to the film composition.

Place, publisher, year, edition, pages
2012. 279-282 p.
Keyword [en]
vanadium oxide, thin film, gas sensor, NO
National Category
Other Chemical Engineering
URN: urn:nbn:se:liu:diva-92404DOI: 10.5162/IMCS2012/3.3.2ISBN: 978-3-9813484-2-2OAI: diva2:620741
14th International Meeting on Chemical Sensors (IMCS 2012), 20-23 May 2012, Nürnberg, Germany
Available from: 2013-05-10 Created: 2013-05-10 Last updated: 2014-01-09Bibliographically approved

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Lloyd Spetz, Anita
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ReferencesLink to record
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