Dynamics of donor bound excitons in ZnO
2013 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 102, no 12, 121103- p.Article in journal (Refereed) Published
Comprehensive time-resolved photoluminescence measurements are performed on shallow neutral donor bound excitons (D0Xs) in bulk ZnO. It is found that transients of the no-phonon D0X transitions (I6-I9 lines) are largely affected by excitation conditions and change from a bi-exponential decay with characteristic fast (τf) and slow (τs) time constants under above-bandgap excitation to a single exponential one, determined by τs, under two-photon excitation. The slow decay also dominates transients of longitudinal optical phonon-assisted and two-electron-satellite D0X transitions, and is attributed to “bulk” D0X lifetime. The fast component is tentatively suggested to represent effects of surface recombination.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2013. Vol. 102, no 12, 121103- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-92614DOI: 10.1063/1.4798531ISI: 000316967100003OAI: oai:DiVA.org:liu-92614DiVA: diva2:621691
Funding Agencies|Swedish Research Council|621-2010-3971|2013-05-162013-05-142013-12-16Bibliographically approved