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Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-6235-7038
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
Gothenburg University, Sweden.
Linköping University, Department of Science and Technology, Physics and Electronics. Linköping University, The Institute of Technology.
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2008 (English)In: Proc. SPIE 6895: Zinc Oxide Materials and Devices III, SPIE - International Society for Optical Engineering, 2008Conference paper, Published paper (Other academic)
Abstract [en]

After our recent successful demonstration of high brightness white light emitting diodes (HB-LEDs) based on high temperature grown n-ZnO nanowires on different p-type semiconductors, we present here LEDs fabricated on n-ZnO nano-wires and p-type organic semiconductors. By employing a low temperature chemical growth (≤ 90 °C) approach for ZnO synthesis combined together with organic p-type semiconductors, we demonstrate high quality LEDs fabricated on a variety of different substrates. The substrates include transparent glass, plastic, and conventional Si. Different multi-layers of p-type organic semiconductors with or without electron blocking layers have been demonstrated and characterized. The investigated p-type organic semiconductors include PEDOT:PSS, which was used as a anode in combination with other p-type polymers. Some of the heterojunction diodes also contain an electron blocking polymer sandwiched between the p-type polymer and the n-ZnO nano-wire. The insertion of electron blocking layer is necessary to engineer the device for the desired emission. Structural and electrical results will be presented. The preliminary I-V characteristics of the organic-inorganic hybrid heterojunction diodes show good rectifying properties. Finally we also present our findings on the origin of the green luminescence band which is responsible of the white light emission in ZnO is discussed.

Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2008.
Series
Proceedings of SPIE - International Society for Optical Engineering, ISSN 0277-786X (Print), 1996-756X (online) ; 6895
Keyword [en]
ZnO nano-wires, LEDs, organic semiconductors
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-93218DOI: 10.1117/12.771654OAI: oai:DiVA.org:liu-93218DiVA: diva2:623493
Conference
Photonics West 2008, San Jose, CA, USA, January 19-24, 2008
Available from: 2013-05-27 Created: 2013-05-27 Last updated: 2017-01-05Bibliographically approved

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Willander, MagnusWadeasa, AmalYang, LiliZhao, QiangxiangNour, Omer

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