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Effect of thermal annealing on defects in post-growth hydrogenated GaNP
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA .
INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy.
INFM and Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy .
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2013 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 10, no 4, 561-563 p.Article in journal (Refereed) Published
Abstract [en]

Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.

Place, publisher, year, edition, pages
John Wiley & Sons, 2013. Vol. 10, no 4, 561-563 p.
Keyword [en]
ODMR, dilute nitrides, Ga interstitial, post-growth hydrogenation, annealing
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-93873DOI: 10.1002/pssc.201200353ISI: 000317284600002OAI: diva2:627312
E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds. Strasbourg, France. May 14-18, 2012.
Available from: 2013-06-11 Created: 2013-06-11 Last updated: 2013-10-02Bibliographically approved

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Dagnelund, DanielChen, WeiminBuyanova, Irina
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