liu.seSearch for publications in DiVA
EnglishSvenskaNorsk
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effect of thermal annealing on defects in post-growth hydrogenated GaNP
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA .
INFM and Dipartimento di Fisica, Università di Roma “La Sapienza”, Roma, Italy.
INFM and Dipartimento di Fisica, Università di Roma “La Sapienza,” Roma, Italy .
Show others and affiliations
2013 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 10, no 4, p. 561-563Article in journal (Refereed) Published
Abstract [en]

Effect of thermal annealing on paramagnetic centers in post-growth hydrogenated GaN0.0081P0.9919 epilayer is examined by means of photoluminescence and optically detected magnetic resonance (ODMR) techniques. In recent studies, several Ga-interstitial (Gai) related centers were found to be activated by the presence of hydrogen in the hydrogenated GaNP alloys. These centers compete with near-band edge radiative recombination. Annealing at 400 ºC in Ar-ambient is found to cause quenching of the Gai-related ODMR signals that were activated by post-growth hydrogenation. We tentatively ascribe this effect to dissociation of the H-Gai complexes and subsequent out-diffusion of H.
Place, publisher, year, edition, pages
John Wiley & Sons, 2013. Vol. 10, no 4, p. 561-563
Keywords [en]
ODMR, dilute nitrides, Ga interstitial, post-growth hydrogenation, annealing
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-93873DOI: 10.1002/pssc.201200353ISI: 000317284600002OAI: oai:DiVA.org:liu-93873DiVA, id: diva2:627312
Conference
E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds. Strasbourg, France. May 14-18, 2012.
Available from: 2013-06-11 Created: 2013-06-11 Last updated: 2017-12-06Bibliographically approved

Open Access in DiVA

fulltext(182 kB)459 downloads
File information
File name FULLTEXT01.pdfFile size 182 kBChecksum SHA-512
41e02ec81752d29136530c2b903687a1acf121bc57b2d8c03e226730965991bbcaacaf54e78820846c2d606ace26b9b045e20c57b426ca8a1487d32d7215cf74
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records

Dagnelund, DanielChen, WeiminBuyanova, Irina

Search in DiVA

By author/editor
Dagnelund, DanielChen, WeiminBuyanova, Irina
By organisation
Functional Electronic MaterialsThe Institute of Technology
In the same journal
Physica Status Solidi. C, Current topics in solid state physics
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
Total: 459 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 228 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.40.0
|
Accessibility
|
DiVA portal
|
DiVA Log in
|
Contact us
|
LiU University Library
|
SwePub
|
Uppsök