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Magneto-optical properties and recombination dynamics of  isoelectronic bound excitons in ZnO
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6405-9509
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
2014 (English)In: AIP Conference Proceedings, ISSN 0094-243X, E-ISSN 1551-7616, Vol. 1583, 186- p.Article in journal (Refereed) Published
Abstract [en]

Magneto-optical and time-resolved photoluminescence (PL) spectroscopies are employed to evaluate electronic structure of a bound exciton (BX) responsible for the 3.364 eV line (labeled as I * 1 ) in bulk ZnO. From time-resolved PL spectroscopy, I * 1 is concluded to originate from the exciton ground state. Based on performed magneto-PL studies, the g-factors of the involved electron and hole are determined as being ge = 1.98 and g ∥ h (g ⊥ h ) = 1.2(1.62) , respectively. These values are nearly identical to the reported g-factors for the I* line in ZnO (Phys. Rev. B 86, 235205 (2012)), which proves that I * 1 should have a similar origin as I* and should arise from an exciton bound to an isoelectronic center with a hole-attractive potential.

Place, publisher, year, edition, pages
2014. Vol. 1583, 186- p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-93892DOI: 10.1063/1.4865632ISI: 000342321600040OAI: oai:DiVA.org:liu-93892DiVA: diva2:627395
Conference
27th Int. Conf. on Defects in Semiconductors, Bologna, Italy, July 21-26, 2013.
Available from: 2013-06-11 Created: 2013-06-11 Last updated: 2017-12-06

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Chen, S. L.Chen, WeiminBuyanova, Irina

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