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Crystallization of NiSix in a Body-Centered Cubic Structure during Solid-State Reaction between an Ultrathin Ni Film and Si(001) Substrate at 150-350 degrees C
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Uppsala University, Sweden .
Uppsala University, Sweden .
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
2013 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 13, no 5, 1801-1806 p.Article in journal (Refereed) Published
Abstract [en]

We investigate ultrathin silicide formation during a solid-state reaction between Ni layers and Si(001) substrates by aberration-corrected electron microscopy. Interdiffusion of two nm thick (equivalent) Ni layers with Si during magnetron-sputter deposition results in an amorphous Ni-Si solid solution. Upon annealing at 150-350 degrees C, a novel body-centered cubic (bcc) NiSix phase is found to grow epitaxially with a crystallographic relationship {100}andlt; 001 andgt; bcc-NiSix//{100}andlt; 001 andgt; Si. bcc-NiSix belongs to the space group I (4) over bar 3m (217) with random Ni and Si distribution. The cell parameter is 0.272 nm, which is approximately half that of NiSi2. Further annealing transforms bcc-NiSi to NiSi2 with an activation energy of 0.6 +/- 0.1 eV.

Place, publisher, year, edition, pages
American Chemical Society , 2013. Vol. 13, no 5, 1801-1806 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-93972DOI: 10.1021/cg301627yISI: 000318468400001OAI: oai:DiVA.org:liu-93972DiVA: diva2:628263
Note

Funding Agencies|Wallenberg Scholar Grant||European Research Council Advanced Grant||

Available from: 2013-06-13 Created: 2013-06-13 Last updated: 2017-12-06

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Lu, JunHultman, Lars

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