Silicon Carbide - The Power Device for the Future
2012 (English)In: 2012 18TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATIONS OF ICS AND SYSTEMS (THERMINIC), IEEE , 2012, 119-124 p.Conference paper (Refereed)
Silicon Carbide (SiC) is a wide bandgap semiconductor with highly appreciated properties making it ideal for high power, high frequency, and high temperature applications. One of these properties is the high thermal conductivity (lambda) which is mentioned in almost every single publication, yet very few measurements of lambda on SiC have been made and essentially no knowledge has been accumulated on the limiting factors on lambda or on what role lambda plays in a finished device. Improvement of lambda may be achieved if the material is isotope enriched i.e. the SiC is dominatingly (SiC)-Si-28-C-12. In this paper we will highlight the properties of SiC as a power device material with specific emphasis on lambda. The results from (SiC)-Si-28-C-12 show that the layers are very low doped and have an isotope purity of 99% or better.
Place, publisher, year, edition, pages
IEEE , 2012. 119-124 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96549ISI: 000313596800025OAI: oai:DiVA.org:liu-96549DiVA: diva2:642277
18th Therminic International Workshop on Thermal Investigations of ICs and Systems