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Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2012 (English)In: 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2012Conference paper, Published paper (Refereed)
Abstract [en]

6H- and 3C-SiC layers were grown using a sublimation based process. The polytype balance is mainly given by the substrate orientation and growth temperature. This paves the way to use 6H- and 3C-SiC in optoelectronic applications.

Place, publisher, year, edition, pages
IEEE , 2012.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-96540DOI: 10.1364/CLEO_AT.2012.JTh2A.74ISI: 000310362402005ISBN: 978-1-55752-943-5 (print)OAI: oai:DiVA.org:liu-96540DiVA: diva2:642282
Conference
CLEO: Science and Innovations, CLEO_SI 2012; San Jose, CA; United States; 6 May 2012 through 11 May 2012
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2014-11-07

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Jokubavicius, ValdasLiljedahl, RickardYakimova, RositsaSyväjärvi, Mikael

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Jokubavicius, ValdasLiljedahl, RickardYakimova, RositsaSyväjärvi, Mikael
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