Stability in growth of 6H-SiC and 3C-SiC for LEDs and solar cells
2012 (English)In: 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), IEEE , 2012Conference paper (Refereed)
6H- and 3C-SiC layers were grown using a sublimation based process. The polytype balance is mainly given by the substrate orientation and growth temperature. This paves the way to use 6H- and 3C-SiC in optoelectronic applications.
Place, publisher, year, edition, pages
IEEE , 2012.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96540DOI: 10.1364/CLEO_AT.2012.JTh2A.74ISI: 000310362402005ISBN: 978-1-55752-943-5OAI: oai:DiVA.org:liu-96540DiVA: diva2:642282
CLEO: Science and Innovations, CLEO_SI 2012; San Jose, CA; United States; 6 May 2012 through 11 May 2012