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Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 490-493 p.Conference paper, Published paper (Refereed)
Abstract [en]

Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 mu m while it stays almost constant in layers thicker than 200 mu m. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 mu m while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 mu m. In samples with varying thicknesses, a bulk lifetime tau(B) = 2.93 mu s and carrier diffusion coefficient D= 2.87 cm(2)/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 490-493 p.
Keyword [en]
6H-SiC; Carrier lifetime; mu PCD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-96516DOI: 10.4028/www.scientific.net/MSF.740-742.490ISI: 000319785500115OAI: oai:DiVA.org:liu-96516DiVA: diva2:642367
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2013-08-21

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Sun, JianwuKamiyama, SatoshiYakimova, RositsaSyväjärvi, Mikael

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