Effect of surface and interface recombination on carrier lifetime in 6H-SiC layers
2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 490-493 p.Conference paper (Refereed)
Carrier lifetimes in 6H-SiC epilayers were investigated by using numerical simulations and micro-wave photoconductivity decay measurements. The measured carrier lifetimes were significantly increasing with an increased thickness up to 200 mu m while it stays almost constant in layers thicker than 200 mu m. From a comparison of the simulation and experimental results, we found that if the bulk lifetime in 6H-SiC is around a few microseconds, both the surface recombination and interface recombination influence the carrier lifetime in layers with thickness less than 200 mu m while only the surface recombination determines the carrier lifetime in layers with thickness more than 200 mu m. In samples with varying thicknesses, a bulk lifetime tau(B) = 2.93 mu s and carrier diffusion coefficient D= 2.87 cm(2)/s were derived from the linear fitting of reciprocal lifetime vs reciprocal square thickness.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 490-493 p.
6H-SiC; Carrier lifetime; mu PCD
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96516DOI: 10.4028/www.scientific.net/MSF.740-742.490ISI: 000319785500115OAI: oai:DiVA.org:liu-96516DiVA: diva2:642367
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)