Optical properties of the niobium centre in 4H, 6H, and 15R SiC
2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 405-408 p.Conference paper (Refereed)
A set of lines in the photoluminescence spectra of 4H-, 6H-, and 15R-SiC in the near-infrared are attributed to Nb-related defects on the ground of doping experiments conducted with 4H-SiC. A model based on a an exciton bound at the Nb-centre in an asymmetric split vacancy configuration at a hexagonal site is proposed, which explains the structure of the luminescence spectrum and the observed Zeeman splitting of the lines.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 405-408 p.
transition metals; niobium; photoluminescence; Zeeman effect
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96515DOI: 10.4028/www.scientific.net/MSF.740-742.405ISI: 000319785500095OAI: oai:DiVA.org:liu-96515DiVA: diva2:642368
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)