liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Photoluminescence of 8H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Nara Institute of Science and Technology, Japan.
Show others and affiliations
2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, 347-350 p.Conference paper, Published paper (Refereed)
Abstract [en]

8H-SiC epilayers grown on small 8H-SiC Lely platelets are investigated optically using photoluminescence spectroscopy. At low temperature the near band gap emission detected in the 2.78 to 2.67 eV range contains sharp lines associated to nitrogen-bound-exciton recombination. Three different no-phonon lines are detected accompanied by their phonon replicas. Free-exciton replicas are also observed which allows the determination of the excitonic band gap. The binding energy of the bound excitons can thus be determined and the ionization energies of the three nitrogen levels in 8H-SiC are estimated and found to be rather shallow compared to the values for other hexagonal polytypes. Additional bound-exciton lines are observed when the experimental photoluminescence temperature is increased.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 347-350 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
8H-SiC; photoluminescence; excitonic band gap; ionization energies
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-96514DOI: 10.4028/www.scientific.net/MSF.740-742.347ISI: 000319785500081ISBN: 978-3-03785-624-6 (print)OAI: oai:DiVA.org:liu-96514DiVA: diva2:642370
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2014-10-08Bibliographically approved

Open Access in DiVA

fulltext(643 kB)601 downloads
File information
File name FULLTEXT01.pdfFile size 643 kBChecksum SHA-512
753d3b8dae923b872c44b294472fcb7e90a0f9159abd4ac78845408ca49d711c932bf0f98ed358f724fe6c66ed83bcf912e8c3f9aacba14cb2b6ea9ae77d44ef
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Henry, AnneGueorguiev Ivanov, IvanJanzén, Erik

Search in DiVA

By author/editor
Henry, AnneGueorguiev Ivanov, IvanJanzén, Erik
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
Total: 601 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 120 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf