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Polytype Inclusions in Cubic Silicon Carbide
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Vilnius University, Lithuania.
Vilnius University, Lithuania.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, 335-338 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, we review our research on 6H-SiC polytype inclusions in 3C-SiC layers, which were grown on nominally on-axis 6H-SiC substrates using sublimation epitaxy. More than 90% coverage by 3C-SiC is typically achieved at growth temperature of 1775 degrees C. The main reason for the polytype inclusions to appear is local supersaturation non-uniformities over the sample surface which appear due to the temperature gradient and spiral growth nature of 6H-SiC. On the 6H-SiC spirals with small steps supersaturation is smaller and 3C-SiC nucleation and growth is diminished. Due to surface free energy and surface diffusion differences, polytype inclusions appear differently when 3C-SiC is grown on the Si- and C-faces. The 6H-SiC inclusions as well as twin boundaries act as neutral scattering centers and lower charge carrier mobility

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 335-338 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
3C-SiC; polytype inclusions; supersaturation; charge carrier mobility
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-96513DOI: 10.4028/www.scientific.net/MSF.740-742.335ISI: 000319785500079ISBN: 978-3-03785-624-6 (print)OAI: oai:DiVA.org:liu-96513DiVA: diva2:642373
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2013-08-29Bibliographically approved

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Vasiliauskas, RemigijusSyväjärvi, MikaelYakimova, Rositsa

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