Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, 315-318 p.Conference paper (Refereed)
High quality bulk-like 3C-SiC were grown on on-axis (0001) 6H-SiC substrate by sublimation epitaxy. The microwave photoconductivity decay mapping measurements revealed that this material shows considerable long carrier lifetimes varied from 3.519 to 7.834 mu s under the injection level of 3.5x10(12) cm(-2), which are comparable with the best carrier lifetimes in 4H-SiC layers. The mapping of high resolution x-ray diffraction obtained from the same region shows that smaller carrier lifetimes seem to correspond to the larger FWHM values and vice versa. This shows that long carrier lifetime obtained in 3C-SiC is due to the improvement of the crystal quality.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 315-318 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
3C-SiC, Carrier Lifetime, High Resolution X-Ray Diffraction (HR-XRD)
IdentifiersURN: urn:nbn:se:liu:diva-96511DOI: 10.4028/www.scientific.net/MSF.740-742.315ISI: 000319785500074ISBN: 978-3-03785-624-6OAI: oai:DiVA.org:liu-96511DiVA: diva2:642376
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia