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Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Erlangen-Nuremberg, Erlangen, Germany.
Leibniz Institute for Crystal Growth, Berlin, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, 283-286 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper we present an investigation on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star-defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star-defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 283-286 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
3C-SiC, AFM, Defects, Homoepitaxy, Sublimation, TEM, X-Ray Diffraction (XRD)
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-96510DOI: 10.4028/www.scientific.net/MSF.740-742.283ISI: 000319785500067ISBN: 978-3-03785-624-6 (print)OAI: oai:DiVA.org:liu-96510DiVA: diva2:642378
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2013-08-29Bibliographically approved

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Hens, PhilipLiljedahl, RickardSyväjärvi, Mikael

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CiteExportLink to record
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