Towards bulk-like 3C-SiC growth using low off-axis substrates
2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 275-278 p.Conference paper (Refereed)
Bulk-like 3C-SiC was grown on 1.2 degrees low off-axis 6H-SiC substrates using a sublimation epitaxy technique. The effects of temperature ramp-up and increase in layer thickness on the 3C-SiC domain formation were explored. The temperature ramp-up had no significant effect on the domain size. The domain size was considerably increased and the crystal quality was significantly improved by increasing the thickness of the layer towards bulk-like material. Average full width at half maximum values of 149 arcsec and 65 arcsec were measured in samples with thicknesses of 305 mu m and 1080 mu m, respectively, at a footprint of 1x3 mm(2). This result implies that heteropeitaxial growth of 3C-SiC on low off-axis 6H-SiC substrates by a sublimation method can be used to prepare 3C-SiC seeds or can be further developed for growth of bulk 3C-SiC material.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 275-278 p.
Bulk 3C-SiC; low off-axis substrates; sublimation epitaxy
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96509DOI: 10.4028/www.scientific.net/MSF.740-742.275ISI: 000319785500065OAI: oai:DiVA.org:liu-96509DiVA: diva2:642380
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)