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Towards bulk-like 3C-SiC growth using low off-axis substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 275-278 p.Conference paper, Published paper (Refereed)
Abstract [en]

Bulk-like 3C-SiC was grown on 1.2 degrees low off-axis 6H-SiC substrates using a sublimation epitaxy technique. The effects of temperature ramp-up and increase in layer thickness on the 3C-SiC domain formation were explored. The temperature ramp-up had no significant effect on the domain size. The domain size was considerably increased and the crystal quality was significantly improved by increasing the thickness of the layer towards bulk-like material. Average full width at half maximum values of 149 arcsec and 65 arcsec were measured in samples with thicknesses of 305 mu m and 1080 mu m, respectively, at a footprint of 1x3 mm(2). This result implies that heteropeitaxial growth of 3C-SiC on low off-axis 6H-SiC substrates by a sublimation method can be used to prepare 3C-SiC seeds or can be further developed for growth of bulk 3C-SiC material.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 275-278 p.
Keyword [en]
Bulk 3C-SiC; low off-axis substrates; sublimation epitaxy
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-96509DOI: 10.4028/www.scientific.net/MSF.740-742.275ISI: 000319785500065OAI: oai:DiVA.org:liu-96509DiVA: diva2:642380
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Available from: 2013-08-21 Created: 2013-08-20 Last updated: 2013-08-21

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Jokubavicius, ValdasLiljedahl, RickardYakimova, RositsaSyväjärvi, Mikael

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Jokubavicius, ValdasLiljedahl, RickardYakimova, RositsaSyväjärvi, Mikael
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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