3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
2013 (English)In: Silicon Carbide and Related Materials 2012 / [ed] Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, Trans Tech Publications , 2013, Vol. 740-742, 257-262 p.Conference paper (Refereed)
The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 257-262 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
3C-SiC(111), CVD, Heteroepitaxy, Photoluminescence (PL), X-Ray Diffraction (XRD)
IdentifiersURN: urn:nbn:se:liu:diva-96508DOI: 10.4028/www.scientific.net/MSF.740-742.257ISI: 000319785500061ISBN: 978-3-03785-624-6OAI: oai:DiVA.org:liu-96508DiVA: diva2:642384
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), 2-6 September 2012, St. Petersburg, Russia