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Morphology optimization of very thick 4H-SiC epitaxial layers
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 251-254 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxial growth of about 200 gm thick, low doped 4H-SiC layers grown on n-type 8 degrees off-axis Si-face substrates at growth rates around 100 mu m/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 gm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 gm thick epitaxial layers with excellent morphology.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 251-254 p.
Keyword [en]
CVD; Chloride-based; Thick epitaxial layer; Morphology
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-96507DOI: 10.4028/www.scientific.net/MSF.740-742.251ISI: 000319785500060OAI: oai:DiVA.org:liu-96507DiVA: diva2:642796
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Available from: 2013-08-23 Created: 2013-08-20 Last updated: 2015-03-11

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Yazdanfar, MilanStenberg, PontusDon Booker, IanGueorguiev Ivanov, IvanPedersen, HenrikKordina, OlleJanzén, Erik

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Yazdanfar, MilanStenberg, PontusDon Booker, IanGueorguiev Ivanov, IvanPedersen, HenrikKordina, OlleJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyChemistry
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CiteExportLink to record
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  • apa
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