Morphology optimization of very thick 4H-SiC epitaxial layers
2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, Trans Tech Publications , 2013, Vol. 740-742, 251-254 p.Conference paper (Refereed)
Epitaxial growth of about 200 gm thick, low doped 4H-SiC layers grown on n-type 8 degrees off-axis Si-face substrates at growth rates around 100 mu m/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 gm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 gm thick epitaxial layers with excellent morphology.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 251-254 p.
CVD; Chloride-based; Thick epitaxial layer; Morphology
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96507DOI: 10.4028/www.scientific.net/MSF.740-742.251ISI: 000319785500060OAI: oai:DiVA.org:liu-96507DiVA: diva2:642796
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)