Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
2013 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 740-742, 213-216 p.Article in journal (Refereed) Published
Numerical simulations are one way to obtain a better and more detailed understanding of the chemical vapor deposition process of silicon carbide. Although several attempts have been made in this area during the past ten years, there is still no general model valid for any range of process parameters and choice of precursors, that can be used to control the growth process, and to optimize growth equipment design. In this paper a first step towards such a model is taken. Here, mainly the hydrocarbon chemistry is studied by a detailed gas-phase reaction model, and comparison is made between C3H8 and CH4 as carbon precursor. The results indicate that experimental differences, which previous models have been unable to predict, may be explained by the new model.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 213-216 p.
Epitaxial growth; Chemical Vapor Deposition; Modeling; Simulation; Gas-phase chemistry; Hydrocarbons
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96506DOI: 10.4028/www.scientific.net/MSF.740-742.213ISI: 000319785500051OAI: oai:DiVA.org:liu-96506DiVA: diva2:642801
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)