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Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-8116-9980
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6175-1815
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2013 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, 213-216 p.Article in journal (Refereed) Published
Abstract [en]

Numerical simulations are one way to obtain a better and more detailed understanding of the chemical vapor deposition process of silicon carbide. Although several attempts have been made in this area during the past ten years, there is still no general model valid for any range of process parameters and choice of precursors, that can be used to control the growth process, and to optimize growth equipment design. In this paper a first step towards such a model is taken. Here, mainly the hydrocarbon chemistry is studied by a detailed gas-phase reaction model, and comparison is made between C3H8 and CH4 as carbon precursor. The results indicate that experimental differences, which previous models have been unable to predict, may be explained by the new model.

Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 213-216 p.
Keyword [en]
Epitaxial growth; Chemical Vapor Deposition; Modeling; Simulation; Gas-phase chemistry; Hydrocarbons
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-96506DOI: 10.4028/www.scientific.net/MSF.740-742.213ISI: 000319785500051OAI: oai:DiVA.org:liu-96506DiVA: diva2:642801
Conference
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Available from: 2013-08-23 Created: 2013-08-20 Last updated: 2017-12-06

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Danielsson, ÖrjanSukkaew, PitsiriYazdanfar, MilanKordina, OlleJanzén, Erik

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Danielsson, ÖrjanSukkaew, PitsiriYazdanfar, MilanKordina, OlleJanzén, Erik
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