Thickness uniformity and electron doping in epitaxial graphene on SiC
2013 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 740-742, 153-156 p.Article in journal (Refereed) Published
Large variations have been observed in the thickness uniformity and carrier concentration of epitaxial graphene grown on SiC by sublimation for samples grown under identical conditions and on nominally on-axis hexagonal SiC (0001) substrates. We have previously shown that these issues are both related to the morphology of the graphene-SiC surface after sublimation growth. Here we present a study on how the substrate polytype, substrate surface morphology and surface restructuring during sublimation growth affect the uniformity and carrier concentration in epitaxial graphene on SiC. These issues were investigated employing surface morphology mapping by atomic force microscopy coupled with local surface potential mapping using scanning Kelvin probe microscopy.
Place, publisher, year, edition, pages
Trans Tech Publications , 2013. Vol. 740-742, 153-156 p.
epitaxial graphene on SiC; thickness uniformity; unintentional doping; scanning Kelvin probe microscopy
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-96504DOI: 10.4028/www.scientific.net/MSF.740-742.153ISI: 000319785500037OAI: oai:DiVA.org:liu-96504DiVA: diva2:642805
9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)